Measurement of Subthreshold Current Variability at 1.5 K Using Addressable MOSFET Array
Variability of 65 nm bulk MOSFETs in subthreshold region was measured at 300 K and 1.5 K using addressable transistor arrays. It was confirmed that variability of current onset voltage (COV) significantly increases at 1.5 K. It is shown that the cut-off performance of the FETs at 1.5 K is governed by variability of subthreshold current including COV, rather than steep minimum subthreshold slope.
Authors
- Kiyoshi Takeuchi (ORCID: https://orcid.org/0000-0002-8392-1029)
- Takuya Saraya (ORCID: https://orcid.org/0000-0002-3796-7747)
- Hiroshi Oka (ORCID: https://orcid.org/0000-0002-6571-3461)
- T. Mizutani (ORCID: https://orcid.org/0000-0002-2358-3945)
- Toshiro Hiramoro
- Masaharu Kobayashi (ORCID: https://orcid.org/0000-0002-7945-6136)
- Takahiro Mori (ORCID: https://orcid.org/0000-0001-5899-1060)
Institutions
- National Institute of Advanced Industrial Science and Technology (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/icmts63811.2025.11068907
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.73