Oscillation in Cryogenic DC Measurements of High Power LDMOS Devices and Solution

Cryogenic DC measurements of high-power LDMOS devices reveal unique oscillations at low temperatures, which disappear above 200 K. These oscillations are linked to negative differential resistance (NDR) caused by self-heating. To address this, we introduce a resistor between the drain and source terminals, effectively eliminating the oscillations. Combined with DC de-embedding, this method ensures accurate device characterization across a wide temperature range. Our results demonstrate the effectiveness of this approach, providing a reliable solution for cryogenic applications and enhancing the understanding of the behavior of the LDMOS device at low temperatures.