Methodology and Test Structures for Studying β-Ga<sub>2</sub>O<sub>3</sub> Dielectric and Contact Interfaces
An outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> plasma surface cleaning prior to metallization.
Authors
- Chadwin D. Young (ORCID: https://orcid.org/0000-0003-0690-7423)
- A. A. Gruszecki
- Paolo La Torraca (ORCID: https://orcid.org/0000-0003-4852-4623)
- Paul Kennedy Hurley (ORCID: https://orcid.org/0000-0001-5137-721X)
- K. S. Agrawal
- K. Cherkaoui (ORCID: https://orcid.org/0000-0002-7062-5570)
- J. Roy (ORCID: https://orcid.org/0000-0002-2799-8304)
- Robert M. Wallace (ORCID: https://orcid.org/0000-0001-5566-4806)
Institutions
- The University of Texas at Dallas (US)
- National University of Ireland (IE)
- University College Cork (IE)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/icmts63811.2025.11068900
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00