Planar FDSOI Reconfigurable Schottky Barrier FETs for Gas Sensing
In this work we present experimental data of a gas sensitive thin channel planar Schottky barrier FET based on a thin palladium front-gate, manufactured using a fully depleted SIMOX SOI with a global back-gate. We show that the drain current is sensitive to ambient air and different ammonia concentrations in vacuum with adjustable sensitivity via the back-gate voltage at room temperature.
Authors
- Dominic Korner
- Tillmann Krauss (ORCID: https://orcid.org/0000-0002-3907-4942)
- Andreas Kramer
- Klaus Hofmann (ORCID: https://orcid.org/0000-0002-6675-0221)
- Maximilian Reuter (ORCID: https://orcid.org/0000-0002-5071-1172)
- Julian Kulenkampff
Institutions
- Technische Universität Darmstadt (DE)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/icmts63811.2025.11068921
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00