An Overview of Gate Oxide Degradation Monitoring Techniques in SiC MOSFETs

Silicon carbide (SiC) MOSFETs have become essential components in high-power and high-temperature applications, thanks to their superior efficiency, switching performance, and thermal conductivity compared to traditional silicon devices. However, gate oxide degradation presents a significant challenge to their long-term reliability. This review explores the underlying mechanisms of gate oxide degradation, temperature-sensitive electrical parameters (TSEPs) for monitoring, and practical approaches to detect and mitigate degradation effects. A synthesis of recent research and advancements provides insight into future directions for improving SiC MOSFET reliability and operational lifespan.