Modified Angelov Model with Improved Accuracy for RF GaN-on-Si HEMTs
Modified Angelov model with improved accuracy for RF GaN-on-Si HEMTs is proposed and verified. In this work, major model equations for accuracy improvement are analyzed. WTK’s GaN-on-Si GS50 dual-gate RF switch technology is applied for the demonstration of model accuracy with the measurement data of DC I-V, S-parameters (SP), and large-signal (LS). Model and Process Design Kit (PDK) are released for customer design and manufacturing already.
Authors
- Tuo‐Hung Hou (ORCID: https://orcid.org/0000-0002-9686-7076)
- David C. Chen (ORCID: https://orcid.org/0000-0002-7675-7208)
- Kevin C. Y. Lee (ORCID: https://orcid.org/0000-0003-0210-2628)
- K. K. Lin
- Barry Lin
- Ming‐Chia Lai
- M. H. Hsieh
- H.C. Lin
- P.S.D. Lin
- Min Li Chou
Institutions
- Novatek Microelectronics (Taiwan) (TW)
- United Microelectronics (Taiwan) (TW)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/icmts63811.2025.11068906
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00