High-Performance GaN-Based Green Flip-Chip Mini-LED with Lattice-Compatible AlN Passivation Layer

The GaN-based green miniaturized light-emitting diode (mini-LED) is a key component for the realization of full-color display. Optimized passivation layers can alleviate the trapping of carriers by sidewall defects and are regarded as an effective way to improve the external quantum efficiency (EQE) efficiency of mini-LEDs. Since AlN has a closer lattice match to GaN compared to other heterogeneous passivation materials, we boosted the EQE of GaN-based green flip-chip mini-LEDs through the deposition of a lattice-compatible AlN passivation layer through atomic layer deposition (ALD) and a SiO₂ passivation layer through plasma-enhanced chemical vapor deposition (PECVD). Benefiting from reduced sidewall nonradiative recombination, the EQE of the green flip-chip mini-LED with a composite ALD-AlN/PECVD-SiO₂ passivation layer reached 34.14% at 5 mA, which is 34.6% higher than that of the green flip-chip mini-LED with a single PECVD-SiO₂ passivation layer. The results provide guidance for the realization of high-performance mini-LEDs by selecting lattice-compatible passivation layers.