Development of Yb-doped Ca₃TaGa₃Si₂O₁₄ scintillator

Abstract Ca 3 TaGa 3 Si 2 O 14 crystals containing 0.5, 1, 2, 5, and 10 at% Yb (Yb:CTGS) were grown by the floating zone method. Emission peaks at 950–1100 nm, originating from the 2 F 5/2 – 2 F 7/2 transitions of Yb 3+ , were observed under UV or X-ray exposure. In the near-infrared region, the photoluminescence quantum yields of the Yb:CTGS samples with 0.5, 1, 2, 5, and 10% Yb-doping were 31.5, 45.2, 62.6, 77.1, and 33.1%, respectively. The Yb:CTGS samples showed good linearity between X-ray exposure dose-rate and output signals in near-infrared ranges. The 5% Yb:CTGS sample showed the lower detection limit of 1.2 mGy h −1 , determined based on three standard deviations of measured background.