Compact modeling of low-voltage Ti3C2Tx MXene-based TFTs for 1-bit ALU circuit implementation

In order to realize a 1-Bit ALU (Arithmetic Logic Unit), this article provides an explanation of the fabrication process for a thin film transistor (TFT) that is based on MXene and operates at low voltage. The Ti 3 C 2 T x −MXene/SnO 2 acts as an active layer of TFT, Li-Al 2 O 3 possess high-k value is used as dielectric layer of this TFT. Aluminum serves as electrode for source and drain, for gate electrode silicon is employed. This fabricated device operated at low voltage ∼ 2 V and exhibits good performance parameters as threshold voltage of 1.2 V, subthreshold swing of 194 mV decade , on-off ratio ∼ 10 5 and mobility 10.6 c m 2 V − sec . Additionally, using Silvaco-Techmodeler tool this fabricated device is compact modeled which is used ahead for the implementation of 1-Bit ALU circuit by the means of Silvaco-Gateway tool. This compact modelling obtaining by Silvaco-Techmodeler tool provides good accuracy ∼ 100% as small fraction of error is estimated between fabricated and modeled data (0.001% and 0.92%). Silvaco-Gateway tool helps for the implementation of 1-Bit ALU circuit in which all the outputs of logic circuits as AND, NOT, OR and XNOR and outputs that are governed by select lines are analyzed which confirms satisfactory transient characteristics for all cases. This fabricated, low-voltage and compact modeled device would be utilized ahead for the realization of microprocessors and memory circuits.