Electrically Tunable Exciton and Telecom-Band Light-Emitting Diodes in Few-Layer Phosphorene

Two-dimensional (2D) semiconductors with direct band gaps offer opportunities for constructing ultrathin and compactly integrated light-emitting diodes (LEDs). Current LEDs based on 2D semiconductors mostly work in the visible light spectrum rather than the near-infrared telecommunication band, hindering their incorporation into established applications such as optical computing and communication. In this study, we report on the LED from the bilayer and trilayer phosphorene in the near-infrared regime leveraging the direct bandgap nature of black phosphorus (BP). The layer-number-sensitive electrical field regulation characteristics of bright excitons in bilayer and trilayer phosphorene were revealed. Moreover, the dominating exciton types and emission wavelengths were demonstrated to be dynamically regulated from a single trilayer phosphorene-based LED near 1500 nm by judiciously controlling the electric field and carrier injection conditions. The findings suggest the potential application of 2D semiconductors in miniaturized light source devices operating in the near-infrared telecommunication band.

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Publication Details

Journal
ACS Nano
Published
2025-07-05
DOI
https://doi.org/10.1021/acsnano.5c02908
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Electrically Tunable Exciton and Telecom-Band Light-Emitting Diodes in Few-Layer Phosphorene

Gan Yuan, Fengyuan Xuan, Xiangyi Wang, Junrong Zhang et al.
ACS Nano
2D Materials and Applications
article

Electrically Tunable Exciton and Telecom-Band Light-Emitting Diodes in Few-Layer Phosphorene

Gan Yuan, Fengyuan Xuan, Xiangyi Wang, Junrong Zhang, Juanjuan Xing, Tianhua Ren, Jiexi Song, Kai Zhang, Cheng Chen, Siyuan Wang, Dong Wang, Yaning Liang, Yun Yao, Junyong Wang
article en

Abstract

Two-dimensional (2D) semiconductors with direct band gaps offer opportunities for constructing ultrathin and compactly integrated light-emitting diodes (LEDs). Current LEDs based on 2D semiconductors mostly work in the visible light spectrum rather than the near-infrared telecommunication band, hindering their incorporation into established applications such as optical computing and communication. In this study, we report on the LED from the bilayer and trilayer phosphorene in the near-infrared regime leveraging the direct bandgap nature of black phosphorus (BP). The layer-number-sensitive electrical field regulation characteristics of bright excitons in bilayer and trilayer phosphorene were revealed. Moreover, the dominating exciton types and emission wavelengths were demonstrated to be dynamically regulated from a single trilayer phosphorene-based LED near 1500 nm by judiciously controlling the electric field and carrier injection conditions. The findings suggest the potential application of 2D semiconductors in miniaturized light source devices operating in the near-infrared telecommunication band.

ACS NanoVol. 19(27)
Shanghai University (CN), University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), University of Macau (MO), Nanjing University of Science and Technology (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Suzhou Research Institute (CN), Ministry of Industry and Information Technology (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Natural Science Foundation of Jiangsu Province, Jiangsu Provincial Key Research and Development Program, Basic Research Program of Jiangsu Province, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 89%
2D Materials and Applications
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