Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein
This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10<sup>-17</sup> A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON-OFF ratio of 2.83 × 10<sup>12</sup> representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (g<sub>m</sub>) of 577 µS, cut-off frequency (f<sub>T</sub>) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V<sup>-1</sup>, and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.
Authors
- G. Lakshmi Priya (ORCID: https://orcid.org/0000-0003-2734-4914)
Institutions
- Vellore Institute of Technology University (IN)
Publication Details
- Journal
- Scientific Reports
- Published
- 2025-07-05
- DOI
- https://doi.org/10.1038/s41598-025-08892-5
- Citations
- 3
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- Vellore Institute of Technology, Chennai
- VIT University