Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein

This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10<sup>-17</sup> A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON-OFF ratio of 2.83 × 10<sup>12</sup> representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (g<sub>m</sub>) of 577 µS, cut-off frequency (f<sub>T</sub>) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V<sup>-1</sup>, and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.

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Publication Details

Journal
Scientific Reports
Published
2025-07-05
DOI
https://doi.org/10.1038/s41598-025-08892-5
Citations
3
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
2.19

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article

Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein

G. Lakshmi Priya
3 citations
Scientific Reports
Advancements in Semiconductor Devices and Circuit Design
2.19
article

Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein

G. Lakshmi Priya
article en
3 citations

Abstract

This work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance. The A-SD-HJ-DD-UTFET showcases an extremely low OFF current level of 8.124 × 10<sup>-17</sup> A/μm which surpasses the symmetric HJ-DD-UTFET by 5,470 times and presents a high ON-OFF ratio of 2.83 × 10<sup>12</sup> representing a 6,261 times improvement. This enhanced performance occurs because of structural asymmetry which makes it suitable for high-end RF and biosensing purposes while reaching a peak transconductance of 536 µS. For dengue NS1 protein detection (κ = 78.7), the TCAD-driven model of the proposed A-SD-HJ-DD-UTFET biosensor delivers a distinctive label-free detection method, achieving a peak transconductance (g<sub>m</sub>) of 577 µS, cut-off frequency (f<sub>T</sub>) of 193 GHz, Gain-Bandwidth Product (GBP) of 201 GHz, Transconductance Generation factor (TGF) of 155 V<sup>-1</sup>, and gain transconductance frequency product (GTFP) of 25.9 THz. These correspond to improvements of 51.4%, 13.5%, 26.4%, 96.4%, and 45.5%, respectively, over SARS-CoV spike protein detection (κ = 2). The A-SD-HJ-DD-UTFET biosensor also exhibits superior linearity performance during dengue NS1 protein detection through its desirable intercept points, minimal intermodulation distortion, and a well-maintained 1 dB compression point, affirming its potential as a high-speed, label-free RF biosensor for infectious disease Point of Care Testing (POCT) diagnostics.

Scientific ReportsVol. 15(1)
Vellore Institute of Technology University (IN)
Vellore Institute of Technology, Chennai, VIT University
Openalex Percentile: Top 12%
Advancements in Semiconductor Devices and Circuit Design
2.19
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