Beyond silicon: technological development and applications of SiC and GaN wide-bandgap semiconductors

Semiconductors play a crucial role in electronic engineering, with both fields mutually reinforcing each other to drive technological progress. In modern electronic engineering, semiconductor materials serve as indispensable foundational materials. In recent years, the continuous expansion of semiconductor materials' application scope in electronic engineering has significantly enhanced the technological level of semiconductor material preparation. Conversely, the rapid evolution of electronic engineering has increased performance demands for semiconductor materials, leading to swift iterations in their development. This paper focuses on commercially available GaN and SiC power transistors, highlighting the characteristic advantages of these two new materials through qualitative analysis based on relevant literature. It introduces the application of Silicon Carbide (SiC) in Tesla and explains the function of Gallium Nitride (GaN) in 5G communications. The findings reveal that these two materials have created new breakthroughs and possibilities for scientific and technological development. However, their practical applications are limited due to the generally cumbersome preparation processes and high requirements for experimental conditions.