Rapid Surface Reconstruction of In<sub>2</sub>S<sub>3</sub> Photoanode via Flame Treatment for Enhanced Photoelectrochemical Performance (Adv. Mater. 26/2025)

Flame Treatment A rapid and scalable high-temperature flame technique is developed to enable surface reconstruction of sulfide semiconductor photoelectrode for enhanced photoelectrochemical(PEC) performances. In article number 2403164, Sung Sik Shin, Xiaolin Zheng, Sun Cho, and their team demonstrate rapid surface reconstruction of Indium sulfide (In2S3) photoanode using the flame process. The flame process transforms the In2S3 surface into a 5 nm-thin In2O3 layer and generates bulk sulfur vacancies simultaneously, leading to a remarkable PEC water oxidation photocurrent density of 8.5 mA cm−2 and iodide oxidation photocurrent density of 7.3 mA cm−2.

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Publication Details

Journal
Advanced Materials
Published
2025-07-01
DOI
https://doi.org/10.1002/adma.202570180
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Rapid Surface Reconstruction of In2S3 Photoanode via Flame Treatment for Enhanced Photoelectrochemical Performance (Adv. Mater. 26/2025)

Sungkyu Kim, Yoo Jae Jeong, Seong Sik Shin, Seongsik Nam et al.
4 links
Advanced Materials
Chalcogenide Semiconductor Thin Films
article

Rapid Surface Reconstruction of In2S3 Photoanode via Flame Treatment for Enhanced Photoelectrochemical Performance (Adv. Mater. 26/2025)

Sungkyu Kim, Yoo Jae Jeong, Seong Sik Shin, Seongsik Nam, In Sun Cho, Xiaolin Zheng, Runfa Tan, Jong-Ho Lee, Tae Gyu Lee
article en

Abstract

Flame Treatment A rapid and scalable high-temperature flame technique is developed to enable surface reconstruction of sulfide semiconductor photoelectrode for enhanced photoelectrochemical(PEC) performances. In article number 2403164, Sung Sik Shin, Xiaolin Zheng, Sun Cho, and their team demonstrate rapid surface reconstruction of Indium sulfide (In2S3) photoanode using the flame process. The flame process transforms the In2S3 surface into a 5 nm-thin In2O3 layer and generates bulk sulfur vacancies simultaneously, leading to a remarkable PEC water oxidation photocurrent density of 8.5 mA cm−2 and iodide oxidation photocurrent density of 7.3 mA cm−2.

Advanced MaterialsVol. 37(26)
Sejong University (KR), Ajou University (KR), Sungkyunkwan University (KR), Stanford University (US)
Openalex Percentile: Top 86%
Chalcogenide Semiconductor Thin Films
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Rapid Surface Reconstruction of In<sub>2</sub>S<sub>3</sub> Photoanode via Flame Treatment for Enhanced Photoelectrochemical Performance (Adv. Mater. 26/2025) — Sungkyu Kim, Yoo Jae Jeong, et al. · Advanced Materials (2025) | TGRS Research Map | TGRS