Selectively Self‐Aligned Sol‐Gel Copper Oxide for Large‐Area Multi‐Valued Logic Devices (Small 26/2025)

Heterojunction Transistors In article number 2407497, Jun-Gyu Choi, Sungjun Park, and co-workers illustrate a wafer-scale array of solution-processed heterojunction transistors fabricated via SAM-assisted selective patterning. This novel strategy highlights a promising alternative to conventional photolithography by effectively addressing the challenges posed by partially overlapped junction structures. A magnified junction interface showcases efficient carrier transport, enabled by the partially overlapped architecture of the metal oxide heterojunction.