Electron Release via Internal Polarization Fields for Optimal S‐H Bonding States (Adv. Mater. 26/2025)

Electron Release via Internal Polarization Fields The internal polarization field at the W–graphene heterointerface induces sulfur vacancy formation under ion bombardment, modulating the electronic structure via excess electron transfer. This enhances valence state filling of W and S atoms. This study highlights the relationship between the WS2 basal plane's electronic structure and electrocatalytic activity, focusing on optimizing S–H bonding. More details can be found in article number 2411211 by Hyeong-U Kim, Pil J. Yoo, Taesung Kim, and co-workers.

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Publication Details

Journal
Advanced Materials
Published
2025-07-01
DOI
https://doi.org/10.1002/adma.202570173
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
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article

Electron Release via Internal Polarization Fields for Optimal S‐H Bonding States (Adv. Mater. 26/2025)

Jihun Mun, Pil J. Yoo, Vinit Kanade, Hyeong‐U Kim et al.
Advanced Materials
Advanced Thermoelectric Materials and Devices
article

Electron Release via Internal Polarization Fields for Optimal S‐H Bonding States (Adv. Mater. 26/2025)

Jihun Mun, Pil J. Yoo, Vinit Kanade, Hyeong‐U Kim, Muyoung Kim, Jin Kon Kim, Hyunho Seok, Ji Won Suk, Seong Soo Yoo, Keon‐Woo Kim, Sihoon Son, Myeong Gyun Nam, Kübra Aydın, Yonas Tsegaye Megra, Jinill Cho, Minjun Kim, Hyeonjeong Lee, Taesung Kim, Jin-Hyoung Lee
article en

Abstract

Electron Release via Internal Polarization Fields The internal polarization field at the W–graphene heterointerface induces sulfur vacancy formation under ion bombardment, modulating the electronic structure via excess electron transfer. This enhances valence state filling of W and S atoms. This study highlights the relationship between the WS2 basal plane's electronic structure and electrocatalytic activity, focusing on optimizing S–H bonding. More details can be found in article number 2411211 by Hyeong-U Kim, Pil J. Yoo, Taesung Kim, and co-workers.

Advanced MaterialsVol. 37(26)
Pohang University of Science and Technology (KR), Korea Research Institute of Standards and Science (KR), Korea Institute of Machinery & Materials (KR), Sungkyunkwan University (KR), Korea University of Science and Technology (KR)
Openalex Percentile: Top 89%
Advanced Thermoelectric Materials and Devices
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