Optical Characteristics of GaAs Spherical Quantum Dots Based on Single and Double Quartic Anharmonic Potentials: The Role of Structural Parameters

This is a numerical investigation of optical and electronic characteristics of GaAs spherical quantum dots based on single and double quartic potentials and presenting a hydrogenic impurity at their center. The radial Schrödinger equation was solved using the finite difference method (FDM) to obtain the energy levels and the wavefunctions. These physical quantities were then used to compute the dipole matrix elements, the total optical absorption coefficient (TOAC), and the binding energies. The impact of the structural parameters in the confining potentials on the red and blue shifts of the TOAC is discussed in the presence and absence of hydrogenic impurity. Our results indicate that the structural parameter k in both potentials plays a crucial role in tuning the TOAC. In the case of single quartic potential, increasing k produces a blue shift; however, its augmentation in the case of double quartic potential displays a blue shift at first, and then a red shift. Furthermore, the augmentation of the parameter k can control the binding energies of the two lowest states, (1s) and (1p). In fact, enlarging this parameter reduces the binding energies and converges them to constant values. In general, the modification of the potential’s parameters, which can engender two shapes of confining potentials (single quartic and double quartic), enables the experimenters to control the desired energy levels and consequently to adjust and select the suitable TOAC between the two lowest energy states (ground (1s) and first excited (1p)).

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Publication Details

Journal
Photonics
Published
2025-07-04
DOI
https://doi.org/10.3390/photonics12070675
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article

Optical Characteristics of GaAs Spherical Quantum Dots Based on Single and Double Quartic Anharmonic Potentials: The Role of Structural Parameters

Sake Wang, Hassen Dakhlaoui, Walid Belhadj, F. Ungan et al.
Photonics
Semiconductor Quantum Structures and Devices
article

Optical Characteristics of GaAs Spherical Quantum Dots Based on Single and Double Quartic Anharmonic Potentials: The Role of Structural Parameters

Sake Wang, Hassen Dakhlaoui, Walid Belhadj, F. Ungan, Najla S. Al-Shameri, Najah Abdullah Alashqar
article en

Abstract

This is a numerical investigation of optical and electronic characteristics of GaAs spherical quantum dots based on single and double quartic potentials and presenting a hydrogenic impurity at their center. The radial Schrödinger equation was solved using the finite difference method (FDM) to obtain the energy levels and the wavefunctions. These physical quantities were then used to compute the dipole matrix elements, the total optical absorption coefficient (TOAC), and the binding energies. The impact of the structural parameters in the confining potentials on the red and blue shifts of the TOAC is discussed in the presence and absence of hydrogenic impurity. Our results indicate that the structural parameter k in both potentials plays a crucial role in tuning the TOAC. In the case of single quartic potential, increasing k produces a blue shift; however, its augmentation in the case of double quartic potential displays a blue shift at first, and then a red shift. Furthermore, the augmentation of the parameter k can control the binding energies of the two lowest states, (1s) and (1p). In fact, enlarging this parameter reduces the binding energies and converges them to constant values. In general, the modification of the potential’s parameters, which can engender two shapes of confining potentials (single quartic and double quartic), enables the experimenters to control the desired energy levels and consequently to adjust and select the suitable TOAC between the two lowest energy states (ground (1s) and first excited (1p)).

PhotonicsVol. 12(7)
Sivas Cumhuriyet Üniversitesi (TR), Qassim University (SA), Umm al-Qura University (SA), Nanophoton (Brazil) (BR), Jinling Institute of Technology (CN), Imam Abdulrahman Bin Faisal University (SA)
Openalex Percentile: Top 88%
Semiconductor Quantum Structures and Devices
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