High Pressure Studies of MoS2 and MoSe2 Using Bridgeman Anvils

This study presents an in-depth analysis of the electrical transport behavior of MoS? and MoSe? single crystals under high-pressure conditions using the Bridgman anvil apparatus. Electrical resistivity was measured via a four-probe method up to a pressure of 6.5 GPa. The findings indicate a pronounced reduction in resistivity as pressure increases, suggesting a narrowing of the band gap and enhanced carrier mobility. The pressure-induced semiconductor-to-metal-like transition is attributed to modifications in the interlayer coupling and band structure, driven by orbital rearrangements. The study also explores the underlying density of states and interatomic interactions that evolve under compression. These results advance our understanding of pressure-tunable electronic transitions in layered TMDCs and highlight the potential of MoS? and MoSe? in future Nano electronic and high-pressure device applications.