Correlation between <sup>1</sup>H Nuclear Magnetic Resonance Chemical Shifts and Tunneling Transport in Self-Assembled Monolayer-Based Molecular Junctions

We investigate the correlation between solution phase <sup>1</sup>H NMR chemical shifts δ and tunneling conductance <i>G</i> in molecular junctions based on self-assembled monolayers (SAMs). The SAM-forming molecules are a series of four substituted oligophenylene dithiols in which π-electron delocalization is systematically varied. Molecular junctions are formed using a conducting probe atomic force microscope (CP-AFM) to make soft contact to the SAMs on Au or Ag. We observe that <i>G</i> exhibits an exponential correlation with the chemical shift δ<sub>β</sub> of the β-protons for each dithiol molecule, consistent with recently reported single-molecule studies. This <i>G</i>-δ<sub>β</sub> sensitivity is qualitatively supported by highest occupied molecular orbital (HOMO) distribution calculations, which reflect the degree of π-electron delocalization. To further explore the underlying causes, we employ an analytical off-resonance tunneling model to extract key electronic density of states parameters from the junction current-voltage (<i>I</i>-<i>V</i>) characteristics. The extracted HOMO-Fermi level offset ε<sub>h</sub> is nearly constant across the molecular series, consistent with commonly observed HOMO pinning in dithiol systems, and thus there is no correlation with δ<sub>β</sub>. In contrast, the metal-HOMO electronic coupling Γ exhibits a strong exponential correlation with δ<sub>β</sub>. Thus, we establish that the cause of the exponential <i>G</i>-δ<sub>β</sub> correlation is the exponential Γ-δ<sub>β</sub> correlation. We also find a linear correlation between δ<sub>β</sub> and SAM work function change ΔΦ measured with a Kelvin probe. Combining the Γ-δ<sub>β</sub> and ΔΦ-δ<sub>β</sub> correlations demonstrates that Γ is exponentially correlated with ΔΦ, which measures interfacial charge transfer. First-principles calculations are necessary for thorough understanding of these correlations, but our results demonstrate that NMR chemical shifts, which reflect local atomic structure and electron densities in molecules, are a potentially powerful tool to understand connections between molecular structure, electron density, interfacial charge transfer, and electronic coupling in molecular junctions.

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Publication Details

Journal
ACS Nano
Published
2025-07-04
DOI
https://doi.org/10.1021/acsnano.5c08913
Citations
1
Primary Topic
Molecular Junctions and Nanostructures
Type
article
Field-Weighted Citation Impact
0.73

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article

Correlation between 1H Nuclear Magnetic Resonance Chemical Shifts and Tunneling Transport in Self-Assembled Monolayer-Based Molecular Junctions

C. Daniel Frisbie, Gookyeong Jeong, Sang Gil Youm
1 citations
ACS Nano
Molecular Junctions and Nanostructures
0.73
article

Correlation between 1H Nuclear Magnetic Resonance Chemical Shifts and Tunneling Transport in Self-Assembled Monolayer-Based Molecular Junctions

C. Daniel Frisbie, Gookyeong Jeong, Sang Gil Youm
article en
1 citations

Abstract

We investigate the correlation between solution phase <sup>1</sup>H NMR chemical shifts δ and tunneling conductance <i>G</i> in molecular junctions based on self-assembled monolayers (SAMs). The SAM-forming molecules are a series of four substituted oligophenylene dithiols in which π-electron delocalization is systematically varied. Molecular junctions are formed using a conducting probe atomic force microscope (CP-AFM) to make soft contact to the SAMs on Au or Ag. We observe that <i>G</i> exhibits an exponential correlation with the chemical shift δ<sub>β</sub> of the β-protons for each dithiol molecule, consistent with recently reported single-molecule studies. This <i>G</i>-δ<sub>β</sub> sensitivity is qualitatively supported by highest occupied molecular orbital (HOMO) distribution calculations, which reflect the degree of π-electron delocalization. To further explore the underlying causes, we employ an analytical off-resonance tunneling model to extract key electronic density of states parameters from the junction current-voltage (<i>I</i>-<i>V</i>) characteristics. The extracted HOMO-Fermi level offset ε<sub>h</sub> is nearly constant across the molecular series, consistent with commonly observed HOMO pinning in dithiol systems, and thus there is no correlation with δ<sub>β</sub>. In contrast, the metal-HOMO electronic coupling Γ exhibits a strong exponential correlation with δ<sub>β</sub>. Thus, we establish that the cause of the exponential <i>G</i>-δ<sub>β</sub> correlation is the exponential Γ-δ<sub>β</sub> correlation. We also find a linear correlation between δ<sub>β</sub> and SAM work function change ΔΦ measured with a Kelvin probe. Combining the Γ-δ<sub>β</sub> and ΔΦ-δ<sub>β</sub> correlations demonstrates that Γ is exponentially correlated with ΔΦ, which measures interfacial charge transfer. First-principles calculations are necessary for thorough understanding of these correlations, but our results demonstrate that NMR chemical shifts, which reflect local atomic structure and electron densities in molecules, are a potentially powerful tool to understand connections between molecular structure, electron density, interfacial charge transfer, and electronic coupling in molecular junctions.

ACS NanoVol. 19(27)
University of Minnesota System (US)
Division of Materials Research, Division of Electrical, Communications and Cyber Systems, Division of Chemistry
Openalex Percentile: Top 26%
Molecular Junctions and Nanostructures
0.73
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