Correlative and <i>In Situ</i> Microscopy Investigation of Phase Transformation, Crystal Growth, and Degradation of Antimony Sulfide Thin Films

Antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>), a compound of earth-abundant elements with a highly anisotropic, quasi-layered crystal structure, has triggered growing interest as a solar absorber in photovoltaics and as a phase-change material in memory devices. However, challenges remain in achieving high-quality thin films with controlled nucleation and growth for optimal performance. Here, we investigate the phase transformation, crystal structure and properties, as well as the growth and degradation of atomic layer-deposited Sb<sub>2</sub>S<sub>3</sub> thin films using <i>in situ</i> TEM and correlative <i>ex situ</i> analysis. The as-deposited amorphous films crystallized at 243 °C, forming grains with an [100] out-of-plane texture that developed into tens to hundreds of micrometer-long, leaf-shaped grains. Introducing an ultrathin ZnS interfacial layer increased nucleation density, resulting in few-micrometer-sized, more uniform grains while retaining the overall [100] texture. <i>In situ</i> observations and subsequent crystal orientation analysis with cutting-edge 4D-STEM and EBSD revealed that the grains grew faster along the [010] ribbon direction and that the bare films underwent early-stage degradation, forming holes in amorphous regions during annealing. The ZnS interlayer mitigated degradation, stabilizing the films and improving their uniformity. These findings offer valuable insights for optimizing Sb<sub>2</sub>S<sub>3</sub> thin films for applications as both solar cell materials and phase-change materials.

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Publication Details

Journal
ACS Nano
Published
2025-07-04
DOI
https://doi.org/10.1021/acsnano.5c04342
Citations
4
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.92

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article

Correlative and In Situ Microscopy Investigation of Phase Transformation, Crystal Growth, and Degradation of Antimony Sulfide Thin Films

Julien Bachmann, Peng‐Han Lu, Janina Maultzsch, Martin Dierner et al.
4 citations
ACS Nano
Chalcogenide Semiconductor Thin Films
2.92
article

Correlative and In Situ Microscopy Investigation of Phase Transformation, Crystal Growth, and Degradation of Antimony Sulfide Thin Films

Julien Bachmann, Peng‐Han Lu, Janina Maultzsch, Martin Dierner, Vanessa M. Koch, Erdmann Spiecker, Johannes Will, Rafal E. Dunin–Borkowski, Maïssa K. S. Barr, Tobias Dierke, Pei‐Chun Liao, Mingjian Wu
article en
4 citations

Abstract

Antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>), a compound of earth-abundant elements with a highly anisotropic, quasi-layered crystal structure, has triggered growing interest as a solar absorber in photovoltaics and as a phase-change material in memory devices. However, challenges remain in achieving high-quality thin films with controlled nucleation and growth for optimal performance. Here, we investigate the phase transformation, crystal structure and properties, as well as the growth and degradation of atomic layer-deposited Sb<sub>2</sub>S<sub>3</sub> thin films using <i>in situ</i> TEM and correlative <i>ex situ</i> analysis. The as-deposited amorphous films crystallized at 243 °C, forming grains with an [100] out-of-plane texture that developed into tens to hundreds of micrometer-long, leaf-shaped grains. Introducing an ultrathin ZnS interfacial layer increased nucleation density, resulting in few-micrometer-sized, more uniform grains while retaining the overall [100] texture. <i>In situ</i> observations and subsequent crystal orientation analysis with cutting-edge 4D-STEM and EBSD revealed that the grains grew faster along the [010] ribbon direction and that the bare films underwent early-stage degradation, forming holes in amorphous regions during annealing. The ZnS interlayer mitigated degradation, stabilizing the films and improving their uniformity. These findings offer valuable insights for optimizing Sb<sub>2</sub>S<sub>3</sub> thin films for applications as both solar cell materials and phase-change materials.

ACS NanoVol. 19(27)
Friedrich-Alexander-Universität Erlangen-Nürnberg (DE), Ernst Ruska Centre (DE)
Deutsche Forschungsgemeinschaft
Openalex Percentile: Top 9%
Chalcogenide Semiconductor Thin Films
2.92
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