TCAD modeling of ferroelectric materials for enhanced electronic device efficiency

Abstract The Negative Capacitance (NC) technology has emerged as a promising answer to the inherent limitations of conventional transistors in power consumption and device speed. The HiEnd project aims to explore and improve the performance of electronic devices based on advanced ferroelectric materials, for high-resolution tracking detectors in future high-energy physics experiments. To this end, NC-FETs based on ferroelectric materials were investigated under X-ray irradiation to assess their radiation hardness for superior detection in harsh environments. Devices were exposed to X-rays up to 50 Mrad (SiO 2 ), and their electrical characteristics were measured.