AC and DC Performance Analysis of GaN-Based GAA FETs with High-K Spacers

This paper explored the impact of using Gallium Nitride as a fin material on the AC and DC performance of high-K spacers GAA FinFETs. Various DC and AC parameters, such as On-current (Ion), Off-Current (Ioff), Switching Speed, Subthreshold Swing (SS), gm, gd, TGF, TFP, fT, and AV, have been analyzed. Based on the simulated results, we discovered that incorporating high-K spacers significantly enhances the digital and analog FOMs of the device. This improvement indicates that high-K spacers are crucial in optimizing the device's performance. Therefore, the GAA FinFETs structure using high-K gate spacers can be viewed as a promising candidate for radio frequency (RF) application.