The Dependence of the Elemental Composition of AlN Films on the Ratio of Argon and Nitrogen in a Plasma-Forming Gas Stream during Magnetron Sputtering of an Aluminum Target
The results of a study of the elemental composition of thin films of aluminum nitride from the ratio of argon and nitrogen fluxes are presented. Aluminum nitride films were obtained by magnetron sputtering of an aluminum target in an atmosphere of a mixture of gases, that is, argon and nitrogen.
Authors
- Л. В. Баранова (ORCID: https://orcid.org/0000-0001-9760-5169)
- Б. Т. Байсова
- V. I. Strunin
Institutions
- Omsk State University (RU)
- Institute of Radiophysics and Electronics (AM)
Publication Details
- Journal
- Doklady Physics
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1134/s1028335825600014
- Primary Topic
- Metal and Thin Film Mechanics
- Type
- article
- Field-Weighted Citation Impact
- 0.00