INVESTIGATION OF THE CHARACTERISTICS OF THE DIAMOND LAYER AND THE INTERFACE OF TWO-LAYER DIAMOND-CARBIDE PLATES

The article presents the results of a study of a number of characteristics of double-layer diamond-carbide plates (ATP) manufactured at the NRC «Kurchatov Institute» - TISNCM. ATP is the cutting element of a drill bit and consists of a layer of Polycrystalline Diamond Compact (PDC) deposited on a substrate of a superhard tungsten carbide alloy with a cobalt bond. The ATPs were manufactured using high-pressure technology (5-5.7 GPa) and high temperatures (~ 1500 °C) using an installation based on a GY850 multi-punch press with a high-pressure chamber with a working volume of 135 cm3. By mechanical processing, the sintered ATP was adjusted to the required dimensions of the drilling tool cutter (ATP cutter). One sample was taken from two batches of ATP cutters manufactured under different technological conditions. Comprehensive studies were carried out on vertical sections of the ATP cutter and the cut diamond layer. For the diamond layer, the size of diamond grains and the presence of diamond layer leaching were determined by optical method. The hardness and modulus of elasticity in various areas of the diamond layer were measured using instrumental indentation on a “NanoScan-4D” nanohardness tester with a Berkovich pyramidal indenter. The elastic constants of the diamond layer were determined by ultrasound using laser excitation of elastic waves in the sample. Three-dimensional images of the interface between a diamond layer and a hard alloy substrate have been obtained by confocal optical profilometry. The images allowed us to determine the thickness of the interface and detect defects in the interface. A relationship has been established between the structure and a number of properties of ATP samples. For citation: Prokhorov V.M., Perfilov S.A., Pozdnyakov A.A., Illich-Svitych E.V., Fedotkin A.P. Investigation of the characteristics of the diamond layer and the interface of two-layer diamond-carbide plates. ChemChemTech [Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol.]. 2025. V. 68. N 9. P. 28-34. DOI: 10.6060/ivkkt.20256809.7y.