In Situ Simultaneous Growth of Layered SnSe₂ and SnSe: a Linear Precursor Approach

Abstract The synthesis of layered tin diselenide (SnSe 2 ) and tin selenide (SnSe) can be achieved independently through distinct nucleation pathways using chemical vapor deposition (CVD). This study successfully achieves the simultaneous growth of SnSe₂ and SnSe, two structurally and functionally distinct tin selenide phases, through hot‐wall CVD. For the first time, this is accomplished through an innovative yet facile synthesis method involving a linear arrangement of precursor granules, which effectively overcame the typical limitations of synthesizing SnSe 2 and SnSe from Se powder and SnI₂ granules. The dual‐phase growth is realized through precise control of precursor gradients, substrate temperature, and growth duration, with selenium stoichiometry and thermodynamic stability criteria dictated phase formation. A transport model is proposed to describe precursor concentration distribution and reaction rates, elucidating shape evolution and the combined growth of SnSe 2 and SnSe. This study enhances the understanding of competitive growth dynamics and highlights the potential for multifunctional lateral heterostructures and phase‐engineered materials for optoelectronic and thermoelectric applications.