A Novel Fullwave-Guided Optical Proximity Correction System Based on Distorted Born Iterative Method

Lithography is crucial for next-generation semiconductor manufacturing, particularly as deep learning and other computationally intensive applications drive the demand for smaller process nodes. As feature sizes shrink, wave effects in light-mask interactions become more pronounced, leading to discrepancies between the intended mask patterns and the printed wafer features. To address these challenges, various resolution enhancement techniques (RETs) have been developed, targeting both the mask and the illumination source (Mack, Chris. Fundamental principles of optical lithography: the science of microfabrication. John Wiley & Sons, 2008.).