High temperature accelerated degradation modelling and life span prediction of uni-traveling-carrier photodetectors based on Wiener process

Abstract This work investigates the high-temperature accelerated degradation behaviour of uni-traveling-carrier photodetectors (UTC-PDs) and establishes a lifespan prediction model based on the Wiener process. We conducted a high-temperature accelerated degradation test on UTC-PDs, using the increase of reverse leakage current as the characteristic parameter. The results show that the dark current increment of UTC-PDs follows a normal distribution under various temperature stress conditions, which allows the degradation process to be effectively modelled using the Wiener process. Through the test, we determined the activation energy of UTC-PDs to be approximately 0.19 eV. By extrapolating the reliability function, failure probability function, and failure rate function from the accelerated degradation model, we predicted the average working life of UTC-PDs at an ambient temperature of 20 °C to be approximately 890 days and obtained the confidence intervals of the above results. This research provides a robust framework for the reliability evaluation and lifespan prediction of UTC-PDs and offers valuable references for the reliability assessment of other types of photodetectors and electronic components subjected to similar degradation mechanisms. The findings highlight the importance of considering temperature stress in the reliability analysis of photonic devices and provide practical guidance for their application in real-world engineering scenarios.