Influence of an in-plane uniform electric field on 2D exciton states in CdSe nanoplatelets

The influence of an external uniform in-plane electrostatic field on the exciton states in a CdSe nanoplatelet (NPL) is considered theoretically. By considering the jump in permittivity at the NPL-medium boundary, the energy spectrum and spatial distribution of the probability density for free carriers and 2D excitons in the presence of an in-plane electric field are obtained. The Stark shifts for a 2D exciton are calculated, and it is shown that for fields above a certain critical value, the exciton decays into an electron and hole pair. It is shown that the field critical value increases with a decrease in the number of monolayers in the direction of strong NPL quantization. The exciton decay rate dependence on the in-plane electric field has been calculated. The main decay mechanisms have been identified for regions of weak and strong electric fields. For the field values less than the critical exciton radiative decay time, calculations of ionization time <i>via</i> tunneling of an exciton are presented. Along with the dependence on the external field, their dependence on the number of monolayers in the direction of strong quantization and the depth of the quantum well NPL in the lateral direction is also shown. For a strong electric field, single-particle states are studied in the NPL plane, and an estimate is given for the tunneling time of electrons through the barrier created by the field for charge carriers in the lateral direction after exciton decay.