Improved performance and bias stability in TFTs with solution-processed graphene oxide-doped In<sub>2</sub>O<sub>3</sub> active layers treated under deep UV irradiation

Xiao-Lin Wang et al. , Improved performance and bias stability in TFTs with solution-processed graphene oxide-doped In 2 O 3 active layers treated under deep UV irradiation.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d5tc01685a
Citations
1
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.73
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article

Improved performance and bias stability in TFTs with solution-processed graphene oxide-doped In2O3 active layers treated under deep UV irradiation

Beomgu Lee, Xiaolin Wang, Sung Jin Kim, Hanlin Zhao
1 citations
Journal of Materials Chemistry C
Thin-Film Transistor Technologies
0.73
article

Improved performance and bias stability in TFTs with solution-processed graphene oxide-doped In2O3 active layers treated under deep UV irradiation

Beomgu Lee, Xiaolin Wang, Sung Jin Kim, Hanlin Zhao
article en
1 citations

Abstract

Xiao-Lin Wang et al. , Improved performance and bias stability in TFTs with solution-processed graphene oxide-doped In 2 O 3 active layers treated under deep UV irradiation.

Journal of Materials Chemistry CVol. 13(30)
Chungbuk National University (KR), Chungbuk National University Hospital (KR)
Openalex Percentile: Top 26%
Thin-Film Transistor Technologies
0.73
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