Highly enhanced thermoelectric performance of halogen element modified SnSe<sub>2</sub> materials <i>via</i> point defect engineering
In this study, bulk SnSe 2 samples singly doped with halogen elements were synthesized, and the Cl-doped SnSe 2 exhibited the most TE performance. The engineering of point defects through halogen doping proves effective in enhancing TE performance.
Authors
- Zhenhua Ge
- Xing Wei Yang (ORCID: https://orcid.org/0009-0000-4822-5127)
- Jing Feng (ORCID: https://orcid.org/0000-0001-6594-3913)
- Qi Luo (ORCID: https://orcid.org/0000-0002-6988-2051)
- Yixin Zhang (ORCID: https://orcid.org/0000-0002-8456-7674)
- Ze Li (ORCID: https://orcid.org/0000-0002-8110-5490)
- Rong Li (ORCID: https://orcid.org/0000-0003-0511-1167)
- Chongyu Wang (ORCID: https://orcid.org/0000-0002-6285-8446)
- W. Bao
Institutions
- Kunming University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01977j
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00