Fabrication and Characterization of p-ZnO/n-ITO Heterojunction Diode for UV Responsive Optoelectronics

This research focuses on developing a p-ZnO/n-ITO heterojunction diode fabricated using a low-cost, solution-based dip-coating technique. Zinc oxide (ZnO) is a wide bandgap semiconductor known for its remarkable optical and electrical properties, making it widely applicable in optoelectronic devices. This study involves the synthesis of p-type ZnO (p-ZnO) nanorods using a solution-based method and their integration with indium tin oxide (ITO) substrates to create a diode with improved rectification properties. The fabricated diode demonstrates rectification ratios of 139 in the dark and 225 under UV illumination alongside a high built-in voltage of 1.1 V. Electrical analyses were performed, including current-voltage (I-V), Hall effect, and capacitance-voltage (C-V) measurements, revealing the diode’s strong UV sensitivity, excellent photo response, and stability in extreme conditions. These characteristics position the p-ZnO/n-ITO heterojunction as a promising candidate for UV sensors and high-performance semiconductor devices in harsh environments. Future research could focus on enhancing doping strategies and exploring the integration of these diodes into flexible electronics to expand their applications in optoelectronics.