Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel

We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm <i>cf</i>. 6.93 μΩ·cm), exhibit shallow surface features (<i>ca</i>. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.

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Publication Details

Journal
Inorganic Chemistry
Published
2025-07-01
DOI
https://doi.org/10.1021/acs.inorgchem.5c01934
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.46

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article

Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel

Thomas Pugh, Joe C. Goodall, Andrew L. Johnson, Kieran C. Molloy
2 citations
Inorganic Chemistry
Semiconductor materials and devices
1.46
article

Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel

Thomas Pugh, Joe C. Goodall, Andrew L. Johnson, Kieran C. Molloy
article en
2 citations

Abstract

We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm <i>cf</i>. 6.93 μΩ·cm), exhibit shallow surface features (<i>ca</i>. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.

Inorganic ChemistryVol. 64(27)
University of Bath (GB)
University of Bath
Openalex Percentile: Top 16%
Semiconductor materials and devices
1.46
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