Strategies for back contact engineering in high-performance flexible kesterite solar cells

Back contact engineering of flexible (Ag,Cu) 2 ZnSn(S,Se) 4 solar cells on Mo foil was performed. Despite the formation of a thick MoSe 2 layer, MoO 3 insertion at the back reduced kesterite decomposition and promoted grain growth, enabling η of 11.2%.

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Publication Details

Journal
Journal of Materials Chemistry A
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ta03303a
Citations
6
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
4.38

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article

Strategies for back contact engineering in high-performance flexible kesterite solar cells

Matteo Valentini, Giorgio Tseberlidis, Edgardo Saucedo, Elaine Armelín et al.
6 citations
Journal of Materials Chemistry A
Chalcogenide Semiconductor Thin Films
4.38
article

Strategies for back contact engineering in high-performance flexible kesterite solar cells

Matteo Valentini, Giorgio Tseberlidis, Edgardo Saucedo, Elaine Armelín, Sonia Lanzalaco, Yuancai Gong, Claudia Malerba, Riccardo Pó, Alex Jiménez‐Arguijo, S. Binetti, Vanira Trifiletti, C. Gobbo, Pau Estarlich
article en
6 citations

Abstract

Back contact engineering of flexible (Ag,Cu) 2 ZnSn(S,Se) 4 solar cells on Mo foil was performed. Despite the formation of a thick MoSe 2 layer, MoO 3 insertion at the back reduced kesterite decomposition and promoted grain growth, enabling η of 11.2%.

Journal of Materials Chemistry AVol. 13(31)
National Agency for New Technologies, Energy and Sustainable Economic Development (IT), Eni (Italy) (IT), University of Milano-Bicocca (IT), Universitat Politècnica de Catalunya (ES)
European Commission, European Cooperation in Science and Technology, Generalitat de Catalunya, Institució Catalana de Recerca i Estudis Avançats, Horizon 2020 Framework Programme, Agencia Estatal de Investigación, H2020 Marie Skłodowska-Curie Actions
Openalex Percentile: Top 5%
Chalcogenide Semiconductor Thin Films
4.38
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