Strain tuning of the transport gap and magnetic order in Dirac fermion systems

Abstract Using the determinant quantum Monte Carlo method, we explore a rich phase diagram featuring strain-induced metal–insulator and magnetic phase transitions in an interacting two-dimensional Dirac fermion system. Asymmetric strain applied along the zigzag crystal direction drives the semimetallic regime into a band-insulating phase, or it breaks the antiferromagnetic order of the Mott insulator, inducing a nonmagnetic insulating phase under strong correlations. The critical strain required for band gap opening or for a transport phase transition is significantly reduced in the presence of Coulomb repulsion, while increasing interaction strength makes it more difficult for strain to induce a nonmagnetic phase transition. In addition, we measure in detail the band gap modulation by strain and identify a doping effect whereby doping inhibits band gap opening. Our results provide an effective way to tune the transport gap, which could help extend the applications of graphene, whose zero band gap currently limits its use.

Authors

Institutions

Publication Details

Journal
Chinese Physics B
Published
2025-07-01
DOI
https://doi.org/10.1088/1674-1056/adea5e
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Strain tuning of the transport gap and magnetic order in Dirac fermion systems

Tianxing Ma, Miao Ye, Jingyao Meng, Zenghui Fan
Chinese Physics B
Topological Materials and Phenomena
article

Strain tuning of the transport gap and magnetic order in Dirac fermion systems

Tianxing Ma, Miao Ye, Jingyao Meng, Zenghui Fan
article en

Abstract

Abstract Using the determinant quantum Monte Carlo method, we explore a rich phase diagram featuring strain-induced metal–insulator and magnetic phase transitions in an interacting two-dimensional Dirac fermion system. Asymmetric strain applied along the zigzag crystal direction drives the semimetallic regime into a band-insulating phase, or it breaks the antiferromagnetic order of the Mott insulator, inducing a nonmagnetic insulating phase under strong correlations. The critical strain required for band gap opening or for a transport phase transition is significantly reduced in the presence of Coulomb repulsion, while increasing interaction strength makes it more difficult for strain to induce a nonmagnetic phase transition. In addition, we measure in detail the band gap modulation by strain and identify a doping effect whereby doping inhibits band gap opening. Our results provide an effective way to tune the transport gap, which could help extend the applications of graphene, whose zero band gap currently limits its use.

Chinese Physics BVol. 34(9)
Beijing Normal University (CN), Guilin University of Electronic Technology (CN)
Openalex Percentile: Top 88%
Topological Materials and Phenomena
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Strain tuning of the transport gap and magnetic order in Dirac fermion systems — Tianxing Ma, Miao Ye, et al. · Chinese Physics B (2025) | TGRS Research Map | TGRS