Theoretical investigation of mechanical, thermodynamic, electronic and transport properties of Ni2P

The all-electron full-potential linearized augmented plane-wave method is used to investigate the structural, electronic, and thermodynamic properties of the hexagonal structure of Ni2P. We show that Ni2P is stable and has interesting mechanical and thermodynamical properties. While we used the non-equilibrium Green’s function formalism to investigate electronic transport properties, particularly conductance by constructing a symmetric junction with Ni2P acting as the spacer between two gold electrodes (Au/Ni2P/Au). We considered both phosphorus-rich and phosphorus-poor terminated interface and we show that the transmission coefficients depends on the nature of Ni2P/Au interface. Furthermore, we mimic experimental junction, by analyzing the impact of phosphorus deficiency. We show that Ni2P’s conductance is altered differently depending on whether the defect is located at the interface or deep within the spacer.

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Publication Details

Journal
Revista Mexicana de Física
Published
2025-07-01
DOI
https://doi.org/10.31349/revmexfis.71.040501
Primary Topic
Semiconductor materials and interfaces
Type
article
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article

Theoretical investigation of mechanical, thermodynamic, electronic and transport properties of Ni2P

Yacine BENDAKMOUSSE, N. Baadji, K. Zanat
4 links
Revista Mexicana de Física
Semiconductor materials and interfaces
article

Theoretical investigation of mechanical, thermodynamic, electronic and transport properties of Ni2P

Yacine BENDAKMOUSSE, N. Baadji, K. Zanat
article en

Abstract

The all-electron full-potential linearized augmented plane-wave method is used to investigate the structural, electronic, and thermodynamic properties of the hexagonal structure of Ni2P. We show that Ni2P is stable and has interesting mechanical and thermodynamical properties. While we used the non-equilibrium Green’s function formalism to investigate electronic transport properties, particularly conductance by constructing a symmetric junction with Ni2P acting as the spacer between two gold electrodes (Au/Ni2P/Au). We considered both phosphorus-rich and phosphorus-poor terminated interface and we show that the transmission coefficients depends on the nature of Ni2P/Au interface. Furthermore, we mimic experimental junction, by analyzing the impact of phosphorus deficiency. We show that Ni2P’s conductance is altered differently depending on whether the defect is located at the interface or deep within the spacer.

Revista Mexicana de FísicaVol. 71(4 Jul-Aug)
University of Batna 1 (DZ), Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf (DZ), University of Guelma (DZ)
Openalex Percentile: Top 88%
Semiconductor materials and interfaces
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