The Performance Degradation of Red, Green, and Blue Micro-LEDs Under High-Temperature Electrical Stress
In this work, the degradation in luminous characteristics of red, green, and blue (RGB) micro-LEDs (10 µm × 10 µm) under electrical stress at 360 K has been investigated. After 280 h of aging, the AlGaInP-based red micro-LEDs exhibit a 31.7% reduction in maximum external quantum efficiency, which is significantly greater than the reductions observed in InGaN-based green and blue micro-LEDs. Specifically, the peak wavelength redshift by 0.6 nm, and blueshift 1.0 nm, and 0.5 nm for RGB micro-LEDs, respectively. The color purity of green and blue micro-LEDs decreases by 3.6% and 0.7%, respectively, resulting in a 7% reduction in color gamut.
Authors
- Yu Liu (ORCID: https://orcid.org/0000-0002-1806-6011)
- Yijun Lü (ORCID: https://orcid.org/0000-0002-1247-6597)
- Changdong Tong (ORCID: https://orcid.org/0000-0002-5647-3152)
- Weijie Guo (ORCID: https://orcid.org/0000-0001-9635-3342)
- Likun Pan (ORCID: https://orcid.org/0000-0001-9294-1972)
- Tingzhu Wu (ORCID: https://orcid.org/0000-0001-9453-6823)
- Quan Deng
- Zhong Chen (ORCID: https://orcid.org/0000-0002-1473-2224)
- Guolong Chen (ORCID: https://orcid.org/0000-0003-0183-5803)
Institutions
- Xiamen University (CN)
Publication Details
- Journal
- Crystals
- Published
- 2025-06-27
- DOI
- https://doi.org/10.3390/cryst15070604
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Fujian Province