Atmospheric Pressure Vapor Transport Deposition of Sb₂Se₃ Nanowires and Their Application in Photodetection

Abstract Photodetectors are important electronic components widely used in both civilian and military fields. However, the application of photodetectors built of traditional materials has been mostly limited to the detection of light intensity, whereas the polarization information is generally unidentifiable. Thus far, there has still been an urgent demand for lensless polarization‐sensitive photodetectors. To this end, this study has conducted a systematic investigation on the synthesis of Sb 2 Se 3 nanowires using a cost‐effective atmospheric pressure vapor transport deposition method. Comprehensive characterizations have conclusively verified the Sb 2 Se 3 nanowires' high crystalline quality. The Sb 2 Se 3 nanowire‐based photodetector has exhibited a distinct photosensitivity. Specifically, under 532 nm illumination, it has demonstrated an impressive responsivity of 5.45 A W −1 , a superior external quantum efficiency of 1273%, and a competitive detectivity of 2.7 × 10 11 Jones. By employing the Sb 2 Se 3 nanowire device as light receiver, proof‐of‐concept broadband optoelectronic imaging application has been realized. Furthermore, the Sb 2 Se 3 nanowire device has shown a pronounced sensitivity to the polarization direction of linearly polarized light, with its photoresponse dynamically varying in response to the change in the polarization angle. Of note, the optimal dichroic ratio has achieved a value of ≈1.84 upon 405 nm excitation. In summary, this study presents a unique avenue for cost‐effectively and efficiently realizing multifunctional photodetection.