Time-Resolved Photoacoustic Response of Thin Semiconductors Measured with Minimal Volume Cell: Influence of Photoinduced Charge Carriers

When a semiconducting sample is illuminated by an intensity-modulated monochromatic light beam with photon energy exceeding the band gap, part of the absorbed energy is directly converted into heat through photon–lattice interactions. This gives rise to a heat source that closely follows the temporal profile of the optical excitation, known as the fast heat source. Simultaneously, another portion of the absorbed energy is used to generate electron-hole pairs. These charge carriers diffuse together and recombine via electron–electron and electron–hole interactions, transferring their kinetic energy to the lattice and producing additional heating of the sample. This indirect heating mechanism, associated with carrier recombination, is referred to as the slow heat source. In this study, we develop a model describing surface temperature variations on the non-illuminated side of a thermally thin semiconductor exposed to a rectangular optical pulse, explicitly accounting for the contribution of surface charge carrier recombinations. Using this model, we investigate the influence of surface recombination velocity and the material’s plasma properties on the time-domain temperature response for both plasma-opaque and plasma-transparent samples. Our results demonstrate that charge carrier recombinations can significantly affect the transient photoacoustic signal recorded using a minimum volume cell, highlighting the potential of time-resolved photoacoustic techniques for probing the electronic properties of semiconductors.