B4.2 - Low-Noise Silicon APD with Enhanced Blue-Violet Sensitivity

A theoretical two-carrier formalism for the calculation of the optoelectrical properties of APDs is established based on the independent Bernouilli trial and generating function method.The gain and excess noise factor can be calculated for any doping profile under any bias and illumination wavelength.This is applied to the design of a CMOS compatible low-noise silicon avalanche photodiode.The doping profile and antireflection layer are optimized to achieve enhanced blue-violet sensitivity and low-noise, while keeping the operating bias at a moderate level.The properties of the fabricated APDs are in good agreement with the theoretical analysis.