Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor

This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages. The p-IGBT, fabricated on an n-type substrate, offers notable commercial advantages over n-IGBTs on p-type substrates. The n-shield can effectively protect the trench gate oxide in the corners of SiC. The n-shield and n-pillar can be either floating or grounded, with the floating shield condition significantly enhancing injection and improving forward conduction performance. The superjunction floating shield p-IGBT (SJFS-p-IGBT) improves forward conduction voltage (V_F) by 47% and 15% compared to conventional planar gate p-IGBT (CP-p-IGBT) and grounded shield p-IGBT (CGS-p-IGBT), respectively. For switching characteristics, the superjunction grounded shield p-IGBT (SJGS-p-IGBT) improves turn-off time (t_off) by 15% compared to the conventional floating shield p-IGBT (CFS-p-IGBT). The trade-off between V_F and turn-off energy (E_off) is analyzed, showing that the SJFS-p-IGBT offers a better trade-off. A negative temperature coefficient is observed at high buffer layer doping concentration and elevated temperatures, leading to an increase in V_F. This provides design guidance for devices operating in parallel at high temperatures. These results demonstrate the SJ's potential to enhance efficiency and performance for ultra-high voltage applications.