A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials
This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa<sub>1-x</sub>As/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on strain, bandgap energy (E<sub>g</sub>), and absorption coefficient. We then optimized the influence of indium concentration (x) on stability, critical thickness, bandgap energy, and absorption coefficient. The effects of temperature and deformation on E<sub>g</sub> were also studied. Finally, we optimized the cutoff frequency (f<sub>c</sub>), capacitive effects, and response frequency by considering the impact of x, active layer thickness (d), and surface area (S). For our future endeavors, we intend to explore additional parameters that may affect the p-i-n response. In future work, we can add transparent double layers in the i. InGaAs layer to reduce the transit time, leading to the development of an ultrafast photodiode.
Authors
- Jean‐Pierre Vilcot (ORCID: https://orcid.org/0000-0002-6448-4740)
- F. Saidi (ORCID: https://orcid.org/0000-0003-2638-7824)
- A. Aissat (ORCID: https://orcid.org/0000-0003-3635-8568)
- Mohamed Houcine Dhaou (ORCID: https://orcid.org/0000-0001-7759-7050)
- Nesrine Bakalem
- Samuel Dupont (ORCID: https://orcid.org/0000-0003-3588-0506)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Qassim University (SA)
- University of Monastir (TN)
- Ahmed Draia University (DZ)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- University of Blida (DZ)
Publication Details
- Journal
- Micromachines
- Published
- 2025-06-29
- DOI
- https://doi.org/10.3390/mi16070764
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- Centre National de la Recherche Scientifique
- Qassim University