Advances in atomistic modeling for epitaxial growth of nitride semiconductors: a DFT-based approach

This highlight presents advances in computational studies for epitaxial crystal growth of nitride semiconductors, showcasing case studies that reveal realistic reconstructions of GaN(0001) and AlN(0001) surfaces.

Authors

T. Akiyama (ORCID: https://orcid.org/0000-0001-9493-4768)

Institutions

Mie University (JP)

Publication Details

Journal: CrystEngComm
Published: 2025-01-01
DOI: https://doi.org/10.1039/d5ce00542f
Citations: 4
Primary Topic: Semiconductor materials and devices
Type: article
Field-Weighted Citation Impact: 2.92

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article

Advances in atomistic modeling for epitaxial growth of nitride semiconductors: a DFT-based approach

T. Akiyama

Jan 1, 2025

4 citations

CrystEngComm

Semiconductor materials and devices

2.92

article

Advances in atomistic modeling for epitaxial growth of nitride semiconductors: a DFT-based approach

T. Akiyama

January 1, 2025article en

4 citations

Abstract

CrystEngCommVol. 27(32)

Mie University (JP)

Openalex Percentile: Top 9%

Semiconductor materials and devices

2.92

DOI Source OpenAlex

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Advances in atomistic modeling for epitaxial growth of nitride semiconductors: a DFT-based approach — T. Akiyama · CrystEngComm (2025) | TGRS Research Map | TGRS