Sliding‐Induced Out‐of‐Plane Ferroelectricity of 2D MnPS<sub>3</sub>

Abstract The emerging 2D transition metal thiophosphites with multiferroicity show great potential in new‐concept and multifunctional nanoelectronics for neuromorphic technologies. Although extensive research has focused on the symmetry‐breaking structures and induced low‐temperature ferroic orders of 2D MnPS 3 , its room‐temperature ferroic behaviors are still elusive. In this work, we reveal the out‐of‐plane ferroelectricity as well as the first room‐temperature ferroic order of 2D MnPS 3 . The observation of interlayer displacements and surface potential differences in 2D MnPS 3 evidences that its unpredicted ferroelectric polarization stems from sliding‐induced symmetry breaking. In addition, we combine 2D MnPS 3 as the dielectric layer and a WSe 2 channel to construct a van der Waals ferroelectric field‐effect transistor, which shows bipolar memory characteristics with an on/off ratio of 10 4 at ambient and cryogenic circumstances. This work uncovers the out‐of‐plane ferroelectricity of 2D MnPS 3 , paving the way to fabricate ferroelectronic devices with multi‐functionality.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-06-30
DOI
https://doi.org/10.1002/adfm.202503780
Citations
3
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.55

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article

Sliding‐Induced Out‐of‐Plane Ferroelectricity of 2D MnPS3

Rongjie Zhang, Changjiu Teng, Shilong Zhao, Qiang Wei et al.
3 citations
Advanced Functional Materials
2D Materials and Applications
1.55
article

Sliding‐Induced Out‐of‐Plane Ferroelectricity of 2D MnPS3

Rongjie Zhang, Changjiu Teng, Shilong Zhao, Qiang Wei, Wenjun Chen, Shengnan Li, Lei Tang, Xuan Weng, Jiachun Xu, Junyang Tan, J. Gui, Bilu Liu
article en
3 citations

Abstract

Abstract The emerging 2D transition metal thiophosphites with multiferroicity show great potential in new‐concept and multifunctional nanoelectronics for neuromorphic technologies. Although extensive research has focused on the symmetry‐breaking structures and induced low‐temperature ferroic orders of 2D MnPS 3 , its room‐temperature ferroic behaviors are still elusive. In this work, we reveal the out‐of‐plane ferroelectricity as well as the first room‐temperature ferroic order of 2D MnPS 3 . The observation of interlayer displacements and surface potential differences in 2D MnPS 3 evidences that its unpredicted ferroelectric polarization stems from sliding‐induced symmetry breaking. In addition, we combine 2D MnPS 3 as the dielectric layer and a WSe 2 channel to construct a van der Waals ferroelectric field‐effect transistor, which shows bipolar memory characteristics with an on/off ratio of 10 4 at ambient and cryogenic circumstances. This work uncovers the out‐of‐plane ferroelectricity of 2D MnPS 3 , paving the way to fabricate ferroelectronic devices with multi‐functionality.

Advanced Functional MaterialsVol. 35(42)
Foshan University (CN), Tsinghua–Berkeley Shenzhen Institute (CN), Songshan Lake Materials Laboratory (CN), Tsinghua University (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, National Science Fund for Distinguished Young Scholars, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 17%
2D Materials and Applications
1.55
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