Modeling the Temperature Dependence of Magneto-Optical Absorption Coefficients in Nanostructured Semiconductors

The article applies the temperature dependence of magneto-optical absorption coefficients in straight-zone nanostructured semiconductors. Two-dimensional combined state density 𝛼𝐵 2𝑑 (𝑁𝑆2𝑑 (𝐵), 𝑇) oscillations were used to calculate the temperature dependence of magneto-optical absorption coefficient oscillations. A mathematical model for determining 𝛼𝐵2𝑑 (𝑁𝑆2𝑑 (𝐵), 𝑇) has been developed for quantum-sized straight-zone semiconductor materials.

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Publication Details

Journal
Romanian Journal of Physics
Published
2025-06-30
DOI
https://doi.org/10.59277/romjphys.2025.70.611
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article

Modeling the Temperature Dependence of Magneto-Optical Absorption Coefficients in Nanostructured Semiconductors

N. A. Sayidov, R. G. Rakhimov, У. И. Эркабоев
Romanian Journal of Physics
Semiconductor Quantum Structures and Devices
article

Modeling the Temperature Dependence of Magneto-Optical Absorption Coefficients in Nanostructured Semiconductors

N. A. Sayidov, R. G. Rakhimov, У. И. Эркабоев
article en

Abstract

The article applies the temperature dependence of magneto-optical absorption coefficients in straight-zone nanostructured semiconductors. Two-dimensional combined state density 𝛼𝐵 2𝑑 (𝑁𝑆2𝑑 (𝐵), 𝑇) oscillations were used to calculate the temperature dependence of magneto-optical absorption coefficient oscillations. A mathematical model for determining 𝛼𝐵2𝑑 (𝑁𝑆2𝑑 (𝐵), 𝑇) has been developed for quantum-sized straight-zone semiconductor materials.

Romanian Journal of PhysicsVol. 70(5-6)
Namangan Engineering Pedagogical Institute (UZ)
Openalex Percentile: Top 88%
Semiconductor Quantum Structures and Devices
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