Growth of AlGaInSbP/InP(100) Heterostructures from High-Temperature Solution via Temperature-Gradient Zone Recrystallization and Their Properties

AlGaInSbP quinary solid solutions have been synthesized for the first time on InP substrates via temperature-gradient zone recrystallization. We have carried out thermodynamic analysis of the solid solutions, determined their composition, assessed their structural perfection, and measured their photoluminescence spectra. Thermodynamic analysis of the AlxGayIn1–x–ySbzP1–z solid solutions has shown that they have constant lattice parameter in the ranges 0.01 ≤ x ≤ 0.3, 0.0 ≤ y ≤ 1.0, and 0.0 ≤ z ≤ 0.6. In the composition region 0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0, and 0.2 ≤ z ≤ 0.7, the solid solutions are prone to spinodal decomposition. Using linear interpolation methods, we calculated parameters of heterophase equilibria in the AlxGayIn1–x–ySbzP1–z–InP system in the regular solution approximation and located the composition regions of direct (Г8 → Г5) transitions (x = 0.1, 0.0 ≤ y ≤ 0.9, and 0.0 ≤ z ≤ 1.0) and indirect (Г8 → X5) transitions (x = 0.1, 0.5 ≤ y ≤ 0.9, and 0.0 ≤ z ≤ 0.7). AlGaInSbP epitaxial layers grown at temperatures in the range 773 ≤ T ≤ 973 K, temperature gradients in the range 10 ≤ G ≤ 80 K/cm, and molten zone thicknesses in the range 100 ≤ l ≤ 300 μm had a surface roughness of ~6 nm and high structural perfection (BH/2 ≈ 10″).