Phase Formation and Optical Properties of Vanadium-Doped Aluminum Oxynitride

The phase formation, morphology, and optical properties of aluminum oxynitride (Al5O6N) doped with 0.01–5.0 at % of vanadium ions (relative to aluminum) have been studied. All samples fabricated by calcining mixtures of Al2O3, AlN, and V2O5 at 1750°C in a nitrogen flow are practically single-phase γ-AlON with minor impurities of aluminum nitride, as well as VC, VN, VO, or their solid solutions at a vanadium content of ≥0.1 at %. In AlON:V, the band gap Eg = 5.82–5.94 eV varies depending on the vanadium concentration. The luminescence of AlON:V is due to intrinsic defects and impurity luminescence centers. The presence of vanadium in AlON leads to an increase in the optical absorption and a decrease in the intensity of intrinsic luminescence because of the formation of vanadium-containing impurity phases.

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Publication Details

Journal
Russian Journal of Inorganic Chemistry
Published
2025-04-01
DOI
https://doi.org/10.1134/s0036023625600443
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73
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article

Phase Formation and Optical Properties of Vanadium-Doped Aluminum Oxynitride

Ilya A. Weinstein, Ivan I. Leonidov, Yuri F. Kargin, А. В. Ищенко et al.
1 citations
Russian Journal of Inorganic Chemistry
Semiconductor materials and devices
0.73
article

Phase Formation and Optical Properties of Vanadium-Doped Aluminum Oxynitride

Ilya A. Weinstein, Ivan I. Leonidov, Yuri F. Kargin, А. В. Ищенко, Н. С. Ахмадуллина, В. П. Сиротинкин
article en
1 citations

Abstract

The phase formation, morphology, and optical properties of aluminum oxynitride (Al5O6N) doped with 0.01–5.0 at % of vanadium ions (relative to aluminum) have been studied. All samples fabricated by calcining mixtures of Al2O3, AlN, and V2O5 at 1750°C in a nitrogen flow are practically single-phase γ-AlON with minor impurities of aluminum nitride, as well as VC, VN, VO, or their solid solutions at a vanadium content of ≥0.1 at %. In AlON:V, the band gap Eg = 5.82–5.94 eV varies depending on the vanadium concentration. The luminescence of AlON:V is due to intrinsic defects and impurity luminescence centers. The presence of vanadium in AlON leads to an increase in the optical absorption and a decrease in the intensity of intrinsic luminescence because of the formation of vanadium-containing impurity phases.

Russian Journal of Inorganic ChemistryVol. 70(4)
Ural Federal University (RU), Russian Academy of Sciences (RU), Baikov Institute of Metallurgy and Materials Science (RU), Institute of Solid State Chemistry (RU), Institute of Metallurgy (RU)
Openalex Percentile: Top 26%
Semiconductor materials and devices
0.73
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