Enhanced valley polarization in a graphene with the magnetic field and the electronic barrier as well as the strain

As the fast advancement of valleytronics and valleytronic devices, the valley-related transport becomes a research hotspot in graphene. Therefore, we analyze the effect of the magnetic field, the electronic barrier and the strain on the valley-dependent transport of electrons in a graphene in the present work. Based on the results, we find that not only the magnetic field and the electronic barrier but also the strain plays an important effect on the valley-related transport property of electrons, and the large valley polarization can be easily achieved and controlled through changing the magnetic field, the electronic barrier and the strain. This result is very helpful for researchers to understand the valley-related transport mechanism of electrons, and provides a new-alternative method of making valleytronic devices.