Structural changes induced by the promoter Ga in nanocrystalline ZnO support used in methanol catalysis

Ga has an ionic radius fitting the radius of Zn much better than Al, which makes it an interesting candidate for doping of ZnO, which is relevant in context with Cu/ZnO-catalysts and with transparent conductive oxides. Here, the structural changes of Ga-doping of nano-scale ZnO, which is obtained <i>via</i> thermal decomposition of hydrozincite, are studied by a combination of X-ray diffraction, ⁷¹Ga/¹H MAS NMR, quantum-chemical calculations and electron microscopy techniques. By quantum chemical calculations the NMR fingerprint of different Ga point defects is predicted, the calculations are validated against experimental data for different crystalline compounds. The relevant point defect in ZnO could be identified by the point symmetry of the isolated defect and comparison to the calculated values. The kinetic solubility limit for Ga in ZnO is determined by X-ray diffraction and NMR. It is shifted to higher values as compared to the Al variant. Finally, the distribution of Ga and H atoms within the nano-scale material is studied by "paramagnetically assisted surface peak assignment" (PASPA) NMR, REDOR and electron microscopy which shows that for Ga substitution ratios above the solubility limit the excess of Ga is incorporated into a heavily disordered or amorphous, hydrogen-rich surface-layer.