Applying in situ bias during TOF–SIMS analysis to investigate ion migration in perovskite devices
Abstract An in situ electrical bias was placed on a perovskite device through the device thickness while under investigation with time-of-flight secondary ion mass spectrometry. The applied bias resulted in an observed reversible migration of halide and lithium ions on the timescale of minutes. The results show a framework that can be used for further study of ion migration in perovskite materials and devices. Graphical abstract
Authors
- Isaac E. Gould (ORCID: https://orcid.org/0000-0002-2389-3548)
- Daniel Morales (ORCID: https://orcid.org/0000-0002-5645-9596)
- Michael David McGehee (ORCID: https://orcid.org/0000-0001-9609-9030)
- Axel F. Palmstrom (ORCID: https://orcid.org/0000-0001-6633-209X)
- Steven P. Harvey
Institutions
- National Laboratory of the Rockies (US)
- University of Colorado Boulder (US)
Publication Details
- Journal
- MRS Communications
- Published
- 2025-06-30
- DOI
- https://doi.org/10.1557/s43579-025-00753-6
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- U.S. Department of Energy
- Office of Energy Efficiency and Renewable Energy
- Office of Energy Efficiency
- National Renewable Energy Laboratory