Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure

Moiré superlattices enable engineering of correlated quantum states through tunable periodic potentials, where twist angle controls periodicity but dynamic potential strength modulation remains challenging. Here, we develop a high-pressure quantum transport technique for van der Waals heterostructures, achieving the ultimate pressure limit (∼9 GPa) in encapsulated moiré devices. In aligned graphene/h-BN, we demonstrate that pressure induces a substantial enhancement of the moiré potential strength, evidenced by the suppression of the first valence bandwidth and the near-doubling of the primary band gap. Moreover, we report the first observation of a tertiary gap emerging above 6.4 GPa, verifying theoretical predictions. Our results establish hydrostatic pressure as a universal parameter to reshape moiré band structures. By enabling quantum transport studies at previously inaccessible pressure regimes, this Letter expands the accessible parameter space for exploring correlated phases in moiré systems.

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Publication Details

Journal
Physical Review Letters
Published
2025-06-30
DOI
https://doi.org/10.1103/xs5j-hp3p
Citations
3
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
1.55

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article

Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure

Changsi Peng, Zengming Zhang, Xiangqi Wang, Wei Qin et al.
3 citations
Physical Review Letters
Graphene research and applications
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article

Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure

Changsi Peng, Zengming Zhang, Xiangqi Wang, Wei Qin, Takashi Taniguchi, Di Mai, Kenji Watanabe, Zhongping Wang, Hongze Zhao, Rucheng Dai, Yupeng Wang, Xiaoyu Sun, Yang Zhang, Chunhui Ye, Zhenhua Qiao, Jiaqi An
article en
3 citations

Abstract

Moiré superlattices enable engineering of correlated quantum states through tunable periodic potentials, where twist angle controls periodicity but dynamic potential strength modulation remains challenging. Here, we develop a high-pressure quantum transport technique for van der Waals heterostructures, achieving the ultimate pressure limit (∼9 GPa) in encapsulated moiré devices. In aligned graphene/h-BN, we demonstrate that pressure induces a substantial enhancement of the moiré potential strength, evidenced by the suppression of the first valence bandwidth and the near-doubling of the primary band gap. Moreover, we report the first observation of a tertiary gap emerging above 6.4 GPa, verifying theoretical predictions. Our results establish hydrostatic pressure as a universal parameter to reshape moiré band structures. By enabling quantum transport studies at previously inaccessible pressure regimes, this Letter expands the accessible parameter space for exploring correlated phases in moiré systems.

Physical Review LettersVol. 135(4)
University of Science and Technology of China (CN), National Institute for Materials Science (JP)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 17%
Graphene research and applications
1.55
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