Experimental Investigation of Inserted HfO<sub>2</sub> Impact on V<sub>Fb</sub> and Interface via ALD for La<sub>2</sub>O<sub>3</sub> Dipole-First Multi-V<sub>T</sub> Techniques

An inserted <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2}$</tex> approach is proposed to achieve <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{FB}}$</tex> tuning and interface improvement in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{La}_{2} \mathrm{O}_{3}$</tex> dipole-first gate stack via ALD. A series of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{FB}}$</tex> levels were achieved with 61 mV linear-tuning step and 310 mV tuning range by manipulating inserted <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2}$</tex> thickness (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&lt;5 \AA$</tex>) ahead of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{La}_{2} \mathrm{O}_{3} / \text{HfO}_{2}$</tex> stacks in MOSCAPs. Furthermore, the device performance and interface are improved indeed. These results indicate that the proposed approach provides a promising way for advanced NS-GAA multi- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\mathrm{T}}$</tex> techniques.

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Published
2025-03-09
DOI
https://doi.org/10.1109/edtm61175.2025.11041485
Primary Topic
Semiconductor materials and devices
Type
article
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article

Experimental Investigation of Inserted HfO2 Impact on VFb and Interface via ALD for La2O3 Dipole-First Multi-VT Techniques

Yu Wang, Yanzhao Wei, Qingzhu Zhang, Huaxiang Yin et al.
Semiconductor materials and devices
article

Experimental Investigation of Inserted HfO2 Impact on VFb and Interface via ALD for La2O3 Dipole-First Multi-VT Techniques

Yu Wang, Yanzhao Wei, Qingzhu Zhang, Huaxiang Yin, Jiaxin Yao
article en

Abstract

An inserted <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2}$</tex> approach is proposed to achieve <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{FB}}$</tex> tuning and interface improvement in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{La}_{2} \mathrm{O}_{3}$</tex> dipole-first gate stack via ALD. A series of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{FB}}$</tex> levels were achieved with 61 mV linear-tuning step and 310 mV tuning range by manipulating inserted <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2}$</tex> thickness (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&lt;5 \AA$</tex>) ahead of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{La}_{2} \mathrm{O}_{3} / \text{HfO}_{2}$</tex> stacks in MOSCAPs. Furthermore, the device performance and interface are improved indeed. These results indicate that the proposed approach provides a promising way for advanced NS-GAA multi- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\mathrm{T}}$</tex> techniques.

Chinese Academy of Sciences (CN), Institute of Microelectronics (CN)
Openalex Percentile: Top 87%
Semiconductor materials and devices
DOISourceOpenAlex
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Experimental Investigation of Inserted HfO<sub>2</sub> Impact on V<sub>Fb</sub> and Interface via ALD for La<sub>2</sub>O<sub>3</sub> Dipole-First Multi-V<sub>T</sub> Techniques — Yu Wang, Yanzhao Wei, et al. · (2025) | TGRS Research Map | TGRS